Metalorganic chemical vapor deposition of .
Titanium dioxide (TiO2) and strontium titanate (SrTiO 3) are promising candidates as high dielectric constant (epsilon) materials in emerging dynamic random access memory capacitors and electroluminescent displays, and as gate insulator in complementary metaloxidesemiconductor devices. This thesis focuses on the development of chemical vapor deposition routes to TiO2 and .